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| BAW56W BAW56W Fast Switching Surface Mount Si-Planar Double Diodes Schnelle Si-Planar Doppel-Dioden fur die Oberflachenmontage Version 2006-03-29 Power dissipation Verlustleistung 2 0.3 0.1 200 mW 75 V SOT-323 0.01 g 10.1 1.250.1 0.1 3 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 2 1.3 Dimensions - Mae [mm] 1 = C1 2 = C2 3 = A1/A2 Maximum ratings (TA = 25C) Power dissipation - Verlustleistung ) 1 2.1 Type Code Grenzwerte (TA = 25C) per diode / pro Diode Ptot IFAV IFRM tp 1 s tp 1 ms tp 1 s IFSM IFSM IFSM BAW56 200 mW 2) 150 mA 2) 450 mA 2) 0.5 A 1A 2A 75 V -55...+150C -55...+150C Max. average forward current (dc) Dauergrenzstrom Repetitive peak forward current Periodischer Spitzenstrom Non repetitive peak forward surge current Stostrom-Grenzwert Repetitive peak reverse voltage Periodische Spitzensperrspannung Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur VRRM Tj TS Characteristics (Tj = 25C) Forward voltage Durchlass-Spannung IF IF IF IF Tj = 25C Tj = 150C = = = = 1 mA 10 mA 50 mA 150 mA VF VF VF VF IR IR IR Kennwerte (Tj = 25C) < 715 mV < 855 mV < 1.00 V < 1.25 V < 2.5 A < 30 A < 50 A Leakage current 3) Sperrstrom VR = VRRM VR = 25 V VR = VRRM 1 2 3 Total power dissipation of both diodes - Summe der Verlustleistungen beider Dioden Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 BAW56W Characteristics (Tj = 25C) Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft CT trr RthA Kennwerte (Tj = 25C) 2 pF < 4 ns < 620 K/W 1) Outline - Gehause 3 Pinning - Anschlussbelegung Dual diode, common anode Doppeldiode, gemeinsame Anode Marking - Stempelung BAW56W = KJC 1 2 1 = C1 2 = C2 3 = A1/A2 120 [%] 100 1 [A] 10-1 80 Tj = 125C 60 10-2 40 10 20 Ptot 0 0 TA 50 100 150 [C] -3 Tj = 25C IF 10-4 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von der Umgebungstemp.1) Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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